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| SI7445DP Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0077 @ VGS = - 4.5 V - 20 0.0094 @ VGS = - 2.5 V 0.0125 @ VGS = - 1.8 V FEATURES ID (A) - 19 - 17 - 15 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested APPLICATIONS D Load Switch Battery Applications PowerPAK SO-8 S 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm G D P-Channel MOSFET Bottom View Ordering Information: SI7445DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS - 4.3 5.4 3.4 - 55 to 150 - 15 - 50 - 1.6 1.9 1.2 W _C -9 A Symbol VDS VGS 10 secs Steady State - 20 "8 Unit V - 19 - 12 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71626 S-31728--Rev. B, 18-Aug-03 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 18 52 1.0 Maximum 23 65 1.3 Unit _C/W C/W 1 SI7445DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 70_C VDS v - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 19 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 17 A VGS = - 1.8 V, ID = - 10 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 15 V, ID = - 19 A IS = - 4.3 A, VGS = 0 V - 40 0.0064 0.0078 0.0105 75 - 0.65 - 1.1 0.0077 0.0094 0.0125 S V W - 0.45 "100 -1 - 10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 4.3 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W 1 VDS = - 15 V, VGS = - 5 V, ID = - 19 A 92 19 16.5 2 40 45 400 190 50 3.4 60 65 600 290 80 ns W 140 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 5 thru 2 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 1.5 V 20 30 20 TC = 125_C 10 25_C - 55_C 10 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71626 S-31728--Rev. B, 18-Aug-03 2 SI7445DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.020 15000 Capacitance r DS(on) - On-Resistance ( W ) 0.016 C - Capacitance (pF) 12000 Ciss 0.012 VGS = 1.8 V VGS = 2.5 V 9000 0.008 VGS = 4.5 V 0.004 6000 3000 Coss Crss 0 4 8 12 16 20 0.000 0 5 10 15 20 25 30 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 19 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 19 A 3 r DS(on) - On-Resistance (W) (Normalized) 4 1.4 1.2 2 1.0 1 0.8 0 0 20 40 60 80 100 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 0.030 50 0.024 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 ID = 19 A 0.018 0.012 TJ = 25_C 0.006 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71626 S-31728--Rev. B, 18-Aug-03 www.vishay.com 3 SI7445DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 ID = 250 mA 0.4 V GS(th) Variance (V) 160 200 Single Pulse Power, Juncion-To-Ambient Power (W) 0.2 120 0.0 80 - 0.2 40 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 65_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71626 S-31728--Rev. B, 18-Aug-03 |
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